Mật độ trạng thái điện tử trong graphene hai lớp bị hydro hóa dưới ảnh hưởng của điện trường không đổi

Abstract: In this work, we investigate the electronic density of states (DOS) in hydrogenated bilayer graphene (H-BLG) subjected in a dc electric field. Four different types of hydrogenation are considered: table-like H-BLG (TLH-BLG), chair-like H-BLG (CLHBLG), reduced table-like H-BLG (rTLH-BLG) and reduced chair-like H-BLG (rCLHBLG). The expression of the DOS is obtained by its relation to the Green function, using Hamiltonian in the tight-binding approximation. Numerical results show that pristine bilayer graphene is a semimetal, while the CLH-BLG and TLH-BLG are semiconductors. Besides, the external electric field has a strong influence on the DOS. In all structures, the DOS at the Fermi energy level increases with increasing the electric field strength. In addition, the band gap in CLH-BLG and TLH-BLG structures decreases with the electric field strength. The above characteristics are the basis for the use of an electric field to adjust the electronic properties of H-BLG so that it is suitable for applications in nano-optoelectronic devices.