Abstract. Undoped and Sn-doped ZnO films are deposited on glass substrates using a
sol-gel spin coating technique with a doping concentration varying from 0% to 3 mol%.
The effects of Sn doping concentration on surface morphology, structural and optical
properties of the ZnO films are investigated using scanning electron microscopy, an X-ray
diffractometer and a UV-Vis-NIR system. As the Sn doping concentration increases, the
ZnO films have a preferential orientation along the [002] direction and the crystalline
particle size becomes bigger. Average optical transmittances of all fabricated films are
higher than 95% in the visible range. The optical bandgap energy of the films is enlarged
by introducing Sn dopant.
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JOURNAL OF SCIENCE OF HNUE DOI: 10.18173/2354-1059.2015-0030
Mathematical and Physical Sci., 2015, Vol. 60, No. 7, pp. 41-46
This paper is available online at
INFLUENCES OF Sn DOPING CONCENTRATION ON CHARACTERISTICS
OF ZnO FILMS FOR SOLAR CELL APPLICATIONS
Nguyen Dinh Lam, Le Thuy Trang, Nguyen Thi Mui, Pham Van Vinh,
Vuong Van Cuong and Nguyen Van Hung
Faculty of Physics, Hanoi National University of Education
Abstract. Undoped and Sn-doped ZnO films are deposited on glass substrates using a
sol-gel spin coating technique with a doping concentration varying from 0% to 3 mol%.
The effects of Sn doping concentration on surface morphology, structural and optical
properties of the ZnO films are investigated using scanning electron microscopy, an X-ray
diffractometer and a UV-Vis-NIR system. As the Sn doping concentration increases, the
ZnO films have a preferential orientation along the [002] direction and the crystalline
particle size becomes bigger. Average optical transmittances of all fabricated films are
higher than 95% in the visible range. The optical bandgap energy of the films is enlarged
by introducing Sn dopant.
Keywords: ZnO, sol-gel spin coating, Sn-doped, solar cell applications.
1. Introduction
ZnO films is one of promising candidate for sensitized solar cell application because of
its unique properties such as non-toxicity, high optical transparency in the visible region, high
surface activities, chemical inertia, and it’s also an economical material [1-9]. In order to fulfill
requirement of this application, ZnO thin films must be modified with regards to its electrical,
structural and optical properties. Many techniques are used to modify characteristics of ZnO films
and introducing another element in the ZnO structure by means of a doping process is a very useful
one [10-14].
ZnO films can be deposited onto substrates using techniques such as pulsed laser deposition,
RF sputtering, chemical vapor deposition, spray pyrolysis and sol-gel spin coating [15-19]. Of
these, the sol-gel spin coating technique has some merits such as easy control of the chemical
components, there is good uniformity of the thin films, low temperature synthesis is possible,
and production approaches economical. The sol-gel spin coating technique is also a promising
technique for the preparation of nano structure materials.
In this work, undoped and Sn-doped ZnO films were deposited on glass substrates using
the sol-gel spin coating technique. The influence of Sn doping concentration on the structural,
surface morphology, and optical properties of the films was investigated in detail to find optimal
conditions for sensitized solar cell fabrication.
Received October 15, 2015. Accepted November 16, 2015.
Contact Nguyen Dinh Lam, e-mail address: lam.nd@hnue.edu.vn
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N. D. Lam, L. T. Trang, N. T. Mui, P. V. Vinh, V. V. Cuong, N. V. Hung
2. Content
2.1. Experimental details
ZnO films were prepared using 0.45 M zinc acetate dehydrate (Zn(CH3COO)2.2H2O) as a
precursor, isopropanol (IPA) as a solvent and diethanolamine (DEA) as a stabilizer. Appropriate
amounts of tin (Sn) doping were achieved by adding tin (IV) chloride pentahydrate (SnCl4.5H2O)
to the precursor solutions with Sn/Zn molar ratios of 0.0, 0.5, 1, 1.5, 2, 2.5 and 3%. The solutions
of undoped and Sn-doped ZnO were stirred at room temperature for 2 h to obtain homogeneous
solutions. The obtained solutions were spread on glass substrates using a spin coating system at a
spin speed of 3000 rpm and spin time of 30 s. Before the coating process, the glass substrates were
cleaned using a NaOH solution, methanol, and deionized water in sequence. The films were then
dried at 150 ◦C for 20 minutes in an oven to evaporate the solvent and remove organic residuals.
The spin-coating and drying processes were repeated five times to get a desired thickness and the
precursor films were then annealed at 500 ◦C for 1 h in air.
X-ray diffraction patterns of the films were measured using an X-Ray Diffractometer (XRD)
D5000 with CuKalpha radiation (λ = 1.5406 A˚) at room temperature. The surface morphologies
of ZnO films were investigated using a Scanning Electron Microscope (SEM). The optical spectra
of the films were studied using an UV-VIS-NIR spectrophotometer with wavelengths of 300 - 800
nm at room temperature.
2.2. Results and discussion
Figure 1. XRD patterns of fabricated ZnO films
Figure 1 shows the typical X-ray diffraction patterns of the films with different Sn doping
concentrations. The XRD patterns indicate that the structure of the films is polycrystalline. The
presence of the (100), (002), (101), (102), (110), 103, and (112) peaks in the XRD patterns also
indicates that ZnO has a hexagonal wurtzite structure. Diffraction peaks related to other impurity
phases are not observed in the XRD patterns. A comparison of the peak intensity of the (002)
peak with the others showed that the crystal of ZnO films has a preferential orientation along
the [002] direction when the Sn doping concentration increases. Furthermore, the interplaner
42
Influences of Sn doping concentration on characteristics of ZnO films for solar cell applications
spacing (d002) is slightly changed as the variation of the Sn doping concentration. This may
attribute to the substitution of Sn4+ for Zn2+ [14]. The crystallite size calculated using Scherrer’s
formula increases with the incorporation of Sn dopant, reaching a maximum value for the 2%
Sn-doped films.
Figure 2. SEM images of Sn-doped ZnO films at (a) 0%, (b) 1%, (c) 2%, and (d) 3%
SEM images of the ZnO films with various Sn doping concentrations are shown in Figure 2.
The images indicated that the films are made up of tens-nanometer particles. In addition, particle
size is bigger and the surface of the films becomes rougher as Sn content increases. Therefore, the
surface roughness of films can be adjusted by Sn doping.
Figure 3. (a) Optical transmittance spectra of the fabricated ZnO films
(b) Plot of average optical transmittance of fabricated samples vs. Sn doping concentration
High optical transparency is one of the most important characteristics of ZnO films. The
optical transmittance spectra of ZnO films are shown in Figure 3 (a). All the optical transmittance
spectra show sharp absorption edges in the wavelength region around 378 nm. The results also
43
N. D. Lam, L. T. Trang, N. T. Mui, P. V. Vinh, V. V. Cuong, N. V. Hung
indicate that the optical transmittance of the films depends strongly on Sn doping concentration.
Average optical transmittances of the doped films are over 99% in the visible range while that of
undoped films is about 93%. This indicates that Sn incorporated in the ZnO would significantly
improve optical transmittance. Furthermore, as seen from the SEM images in Figure 2, the higher
transmittance in the films may also be attributed to the increase in optical scattering caused by the
mixing of small and large particles as well as its rough surface morphology. However, when Sn
doping concentration increases, the optical absorption of the samples decreases sharply at short
wavelengths which have energies higher than the bandgap energy of the ZnO films. Therefore,
films that exhibits a high optical transmission in the visible region wavelengths and high optical
absorption at short wavelengths might be useful for solar cell application.
Figure 4 (a) First derivative (dT/dλ) plot of the optical transmittance spectra of the ZnO films
(b) Optical bandgap energy vs. Sn doping concentration
The first derivative of the optical transmittance spectra are presented in Figure 4 (a). The
bandgap energies that correspond to the peaks for all of the films are extracted and plotted in
Figure 4 (b). The result indicates that the bandgap can be enlarged slightly with an increase in Sn
doping concentration. The blue shift of the absorption edge might be attributed to an increase of
carrier doping concentration. The doping increases the carrier concentration, when the Zn ions are
replaced by Sn ions, which may shift the Fermi level leading to a widening of the bandgap and an
increase in transmission [20].
3. Conclusions
Highly transparent Sn-doped ZnO films have been successfully fabricated on glass
substrates using the sol-gel spin coating technique. Transmittance of the doped ZnO films is higher
than that of the undoped-ZnO films and this can be attributed to an enhancement of the surface
roughness. The Sn-doped ZnO films exhibits a preferred orientation along the [002] direction. The
optical transmittances of all the films are over 95% in the visible range. The energy bandgap of
the Sn-doped ZnO films varied from 3.28 to 3.31 eV. Based on these results, it can be concluded
that Sn doped-ZnO films are useful for solar cell application.
Acknowledgments: This research is funded by Vietnam National Foundation for Science and
Technology Development (NAFOSTED) under grant number 103.99-2014.60.
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Influences of Sn doping concentration on characteristics of ZnO films for solar cell applications
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